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| FSX017X GaAs FET & HEMT Chips FEATURES * Medium Power Output: P1dB=21.5dBm(Typ.)@8.0GHz * High Power Gain: G1dB=11dB(Typ.)@8.0GHz * Proven Reliability Drain DESCRIPTION The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic range and are suitable for use in medium power, wide band, linear drive amplifiers or oscillators. Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS Ptot Tstg Tch Tc = 25C Condition Source Source Gate Rating 12 -5 1.0 -65 to +175 175 Unit V V W C C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain - source operating voltage (VDS) should not exceed 8 volts. 2. The forward and reverse gate currents should not exceed 0.7 and -0.1 mA respectively with gate resistance of 2000. 3. The operating channel temperature (Tch) should not exceed 145C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Noise Figure Associated Gain Symbol IDSS gm Vp VGSO NF Gas Test Conditions VDS = 3V, VGS = 0V VDS = 3V, IDS = 27mA VDS = 3V, IDS = 2.7mA IGS = -2.7A VDS = 3V, IDS = 10mA f = 8GHz Min. 35 -0.7 -5.0 Limit Typ. Max. 55 75 50 -1.2 2.5 10.5 21.5 21.5 20.5 15.0 11.0 7.5 120 -1.7 150 Unit mA mS V V dB dB dBm dBm dBm dB dB dB C/W Output Power at 1 dB G.C.P. P1dB f = 4GHz VDS = 8V, f = 8GHz 20.5 IDS = 0.7 IDSS f = 12GHz f = 4GHz VDS = 8V, f = 8GHz 10.0 IDS = 0.7 IDSS f = 12GHz Channel to Case - Power Gain at 1 dB G.C.P. Thermal Resistance G1dB Rth Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3) The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability. G.C.P.: Gain Compression Point Edition 1.2 July 1999 1 FSX017X GaAs FET & HEMT Chips POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAG Total Power Dissipation (W) 1.0 0.8 0.6 0.4 0.2 70 Drain Current (mA) 60 50 40 30 20 10 2 4 6 VGS = 0V -0.2V -0.4V -0.6V -0.8V -1.0V -1.2V 8 10 0 50 100 150 200 Case Temperature (C) Drain-Source Voltage (V) OUTPUT POWER vs. INPUT POWER 22 VDS = 8V 20 f=4GHz 8GHz 12GHz P1dB vs. VDS IDS = 0.7I DSS 22 20 18 16 14 f = 8GHz IDS = 0.7 IDSS Output Power (dBm) 18 16 f=4GHz 8GHz 12GHz 12 10 8 -4 -2 0 add 40 20 add (%) 14 60 P1dB (dBm) Pout 2 4 6 8 10 12 4 5 6 7 8 Input Power (dBm) Drain-Source Voltage (V) 2 FSX017X GaAs FET & HEMT Chips S-PARAMETERS VDS = 8V, IDS = 35mA FREQUENCY (MHZ) 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 16000 17000 18000 19000 20000 S11 MAG .989 .960 .925 .890 .860 .833 .814 .799 .788 .780 .773 .768 .762 .759 .759 .759 .764 .766 .771 .778 S21 ANG -24.0 -46.5 -66.6 -84.0 -99.0 -111.8 -122.6 -132.1 -140.6 -148.1 -154.7 -160.9 -166.3 -171.4 -176.0 179.6 175.6 171.6 167.7 164.1 S12 ANG 162.3 145.7 130.9 117.7 106.3 95.9 86.5 78.2 70.2 62.8 55.5 48.7 42.5 36.4 29.7 25.1 18.1 12.7 7.5 1.2 S22 ANG 76.7 65.4 55.1 46.0 38.6 32.5 27.4 23.2 18.6 15.1 12.0 9.1 5.9 2.6 2.1 -.2 -3.1 -3.6 -6.6 -10.1 MAG 4.538 4.260 3.890 3.493 3.132 2.814 2.525 2.294 2.095 1.931 1.782 1.646 1.536 1.442 1.343 1.269 1.215 1.137 1.087 1.042 MAG .013 .025 .035 .042 .048 .052 .054 .057 .060 .061 .063 .064 .065 .065 .065 .068 .066 .069 .071 .070 MAG .837 .820 .801 .782 .764 .751 .740 .733 .726 .720 .716 .710 .704 .702 .699 .699 .697 .695 .694 .691 ANG -6.1 -11.9 -16.9 -21.6 -25.9 -29.9 -33.8 -37.8 -41.7 -45.7 -49.7 -53.6 -57.6 -61.4 -65.4 -69.5 -73.4 -77.7 -81.8 -85.4 NOTE:* The data includes bonding wires. n: number of wires Gate n=1 (0.1mm length, 25m Dia Au wire) Drain n=1 (0.1mm length, 25m Dia Au wire) Source n=4 (0.2mm length, 25m Dia Au wire) Download S-Parameters, click here 3 FSX017X GaAs FET & HEMT Chips CHIP OUTLINE 42020 100 (Unit: m) Drain 100 200 Source Source Gate 100 100 100 Die Thickness: 10020m For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS EUROPE, GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 100 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: * Do not put these products into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4 45020 |
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